Geometry-diversified Coulomb excitations in trilayer AAB stacking graphene
Abstract
The lower-symmetry trilayer AAB-stacked graphene exhibits rich electronic properties and thus diverse Coulomb excitations. Three pairs of unusual valence and conduction bands create nine available interband excitations for the undoped case, in which the imaginary (real) part of the polarizability shows 1D square root asymmetric peaks and 2D shoulder structures (pairs of antisymmetric peaks and logarithm type symmetric peaks). Moreover, the low frequency acoustic plasmon, being revealed as a prominent peak in the energy loss spectrum, can survive in a narrow gap system with the large-density-of-states from the valence band. This type of plasmon mode is similar to that in a narrow gap carbon nanotube. However, the decisive mechanism governing this plasmon is the intraband conduction state excitations. Its frequency, intensity and critical momentum exhibit a non-monotonic dependence on the Fermi energy. The well-defined electron-hole excitation boundaries and the higher frequency optical plasmons are transformed by varying the Fermi energy. There remain substantial differences between the electronic properties of trilayer AAB, ABC, AAA and ABA graphene stackings.
Keywords
Cite
@article{arxiv.1807.11776,
title = {Geometry-diversified Coulomb excitations in trilayer AAB stacking graphene},
author = {Chiun-Yan Lin and Bor-Luen Huang and Godfrey Gumbs and Ming-Fa Lin},
journal= {arXiv preprint arXiv:1807.11776},
year = {2018}
}
Comments
20 pages, 8 figures. arXiv admin note: text overlap with arXiv:1601.00223 by other authors