English

Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces

Optics 2025-07-11 v1

Abstract

Tunable biphoton quantum entanglement generated from nonlinear processes is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we overcome this constraint by introducing symmetry-breaking in nonlinear polarization to generate optically tunable biphoton entanglement at picosecond speeds. Asymmetric optical responses have made breakthroughs in classical applications like non-reciprocal light transmission. We now experimentally demonstrate the nonlinear asymmetry response for biphoton entanglement using a semiconductor metasurface incorporating [110] InGaP nano-resonators with structural asymmetry. We realize continuous tuning of polarization entanglement from near-unentangled states to a Bell state. This tunability can also extend to produce tailored hyperentanglement. Furthermore, our nanoscale entanglement source features an ultra-high coincidence-to-accidental ratio of 7×104\approx7\times10^4, outperforming existing semiconductor flat optics by two orders of magnitude. Introducing asymmetric nonlinear response in quantum metasurfaces opens new directions for tailoring on-demand quantum states and beyond.

Keywords

Cite

@article{arxiv.2409.10845,
  title  = {Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces},
  author = {Jinyong Ma and Tongmiao Fan and Tuomas Haggren and Laura Valencia Molina and Matthew Parry and Saniya Shinde and Jihua Zhang and Rocio Camacho Morales and Frank Setzpfandt and Hark Hoe Tan and Chennupati Jagadish and Dragomir N. Neshev and Andrey A. Sukhorukov},
  journal= {arXiv preprint arXiv:2409.10845},
  year   = {2025}
}

Comments

27 pages, 4 figures