We report on Ge coated silicon nanowires (SiNWs) sensors synthesized with metal assisted chemical etching and qualify their functionality as human respiratory sensor. The sensors were made from p-type single-crystalline (100) silicon wafers using a silver catalysed top-down etching, afterwards coated by 50 nm Ge thin layer using a magnetron sputtering. The Ge post-treatment were performed by rapid thermal annealing (RTA) at 450 and 700 C degrees. The sensors were characterized by X-ray diffraction diffractogram and scanning electron microscopy. It is demonstrated that the sensors are highly sensitive as human breath detectors, with rapid response and frequency detect-ability. They are also shown to be a good candidate for human respiratory diseases diagnoses.
@article{arxiv.2302.08970,
title = {Ge coated silicon nanowires as human respiratory sensing device},
author = {E. Fakhri and M. T. Sultan and A. Manolescu and S. Ingvarsson and H. G. Svavarsson},
journal= {arXiv preprint arXiv:2302.08970},
year = {2023}
}
Comments
International Semiconductor Conference - CAS 2022, Romania