Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite extensive research, the spin-to-charge conversion efficiency, usually characterized by the spin Hall angle ({\theta}SH), remains low at room temperature. In this work, we employed pulsed laser deposition to synthesize high-quality ternary topological insulators (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. We find that the value of {\theta}SH reaches ~0.76 at room temperature and increases to ~0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. Our findings provide an innovative approach to tailoring the spin-to-charge conversion in topological insulators and pave the way for their applications in energy-efficient spintronic devices.
@article{arxiv.2502.19736,
title = {Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature},
author = {Wenxuan Sun and Yequan Chen and Ruijie Xu and Wenzhuo Zhuang and Di Wang and Long Liu and Anke Song and Guozhong Xing and Yongbing Xu and Rong Zhang and Cui-Zu Chang and Xuefeng Wang},
journal= {arXiv preprint arXiv:2502.19736},
year = {2025}
}