A series of recent experimental works on twisted MoTe2 homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of ν=−1, and the fractional quantum anomalous Hall effect is observed at ν=−2/3 and ν=−3/5. In this work, we investigate the electronic properties of AA-stacked twisted bilayer MoTe2 at ν=−2 by k-space Hartree-Fock calculations. We find that the phase diagram is qualitatively similar to the phase diagram of a Kane-Mele-Hubbard with staggered onsite potential. A noteworthy phase within the diagram is the antiferromagnetic Chern insulator, stabilized by the external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. We highlight that the antiferromagnetic Chern insulator phase is most evident at a twist angle of approximately 4∘. Our research proposes the potential of realizing a Chern insulator beyond ν=−1, and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moir\'e superlattices.
@article{arxiv.2308.07488,
title = {Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides},
author = {Xiaoyu Liu and Chong Wang and Xiao-Wei Zhang and Ting Cao and Di Xiao},
journal= {arXiv preprint arXiv:2308.07488},
year = {2024}
}