Gate induced strain on a two-dimensional hole gas in silicon

D. van der Bovenkamp; C. S. A. Müller; B. D. Pantiru; I. Bošnjak; M. Cignoni; Q. Torrent Nicolau; M. E. Bal; S. Wiedmann; J. Ridderbos; F. A. Zwanenburg

Gate induced strain on a two-dimensional hole gas in silicon

Mesoscale and Nanoscale Physics 2026-07-08 v1 Applied Physics Quantum Physics

Authors: D. van der Bovenkamp , C. S. A. Müller , B. D. Pantiru , I. Bošnjak , M. Cignoni , Q. Torrent Nicolau , M. E. Bal , S. Wiedmann , J. Ridderbos , F. A. Zwanenburg

View on arXiv ↗ PDF ↗

Abstract

We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate thickness, and thereby the strain in the channel, results in the onset of a second subband contributing to Shubnikov-de Haas oscillations. Temperature-dependent magnetotransport measurements reveal distinct cyclotron masses of $m_c^*=(0.36\pm0.04)m_0$ and $m_c^*=(0.49\pm0.02)m_0$ . The measured cyclotron masses differ from those expected for an idealized heavy-hole (HH)/light-hole (LH) picture, reflecting the combined influence of quantum confinement, strain, and HH-LH mixing on the valence band.

Keywords

two-dimensional hole gas gate-induced strain silicon Shubnikov-de Haas oscillations cyclotron mass valence band

Cite

@article{arxiv.2607.07932,
  title  = {Gate induced strain on a two-dimensional hole gas in silicon},
  author = {D. van der Bovenkamp and C. S. A. Müller and B. D. Pantiru and I. Bošnjak and M. Cignoni and Q. Torrent Nicolau and M. E. Bal and S. Wiedmann and J. Ridderbos and F. A. Zwanenburg},
  journal= {arXiv preprint arXiv:2607.07932},
  year   = {2026}
}

Comments

7 pages, 6 figures