Gate-controlled ultraviolet photo-etching of graphene edges
Materials Science
2013-11-15 v1 Mesoscale and Nanoscale Physics
Abstract
The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied, while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption, while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.
Keywords
Cite
@article{arxiv.1311.3452,
title = {Gate-controlled ultraviolet photo-etching of graphene edges},
author = {Nobuhiko Mitoma and Ryo Nouchi},
journal= {arXiv preprint arXiv:1311.3452},
year = {2013}
}
Comments
13 pages, 4 figures