Gate-controllable spin-battery
Mesoscale and Nanoscale Physics
2009-11-10 v1
Abstract
We propose a gate-controllable spin-battery for spin current. The spin-battery consists of a lateral double quantum dot under a uniform magnetic field. A finite DC spin-current is driven out of the device by controlling a set of gate voltages. Spin-current can also be delivered in the absence of charge-current. The proposed device should be realizable using present technology at low temperature.
Cite
@article{arxiv.cond-mat/0307288,
title = {Gate-controllable spin-battery},
author = {Wen Long and Qing-feng Sun and Hong Guo and Jian Wang},
journal= {arXiv preprint arXiv:cond-mat/0307288},
year = {2009}
}
Comments
3 pages, 3 figures, accepted by Appl. Phys. Lett