Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.
@article{arxiv.cond-mat/0601276,
title = {Gamma radiation exposure of MCT diode arrays},
author = {F. F. Sizov and I. O. Lysiuk and J. V. Gumenjuk-Sichevska and S. G. Bunchuk and V. V. Zabudsky},
journal= {arXiv preprint arXiv:cond-mat/0601276},
year = {2007}
}
Comments
11 pages, 4 figures, submitted to Semiconductor Science and Technology