Frictional drag between quantum wells mediated by fluctuating electromagnetic field
Abstract
We use the theory of the fluctuating electromagnetic field to calculate the frictional drag between nearby two-and three dimensional electron systems. The frictional drag results from coupling via a fluctuating electromagnetic field, and can be considered as the dissipative part of the van der Waals interaction. In comparison with other similar calculations for semiconductor two-dimensional system we include retardation effects. We consider the dependence of the frictional drag force on the temperature , electron density and separation . We find, that retardation effects become dominating factor for high electron densities, corresponding thing metallic film, and suggest a new experiment to test the theory. The relation between friction and heat transfer is also briefly commented on.
Cite
@article{arxiv.cond-mat/0605520,
title = {Frictional drag between quantum wells mediated by fluctuating electromagnetic field},
author = {A. I. Volokitin and B. N. J. Persson},
journal= {arXiv preprint arXiv:cond-mat/0605520},
year = {2009}
}
Comments
14 pages, 4 figures