Fractal-Mound Growth of Pentacene Thin Films
Soft Condensed Matter
2009-11-11 v1 Statistical Mechanics
Abstract
The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.
Keywords
Cite
@article{arxiv.cond-mat/0610527,
title = {Fractal-Mound Growth of Pentacene Thin Films},
author = {Serkan Zorba and Yonathan Shapir and Yongli Gao},
journal= {arXiv preprint arXiv:cond-mat/0610527},
year = {2009}
}
Comments
(5 Figures). Accepted to PR B (in print)