We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is dramatically sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, i. e. memory dip in a field dependence of conductance. Theory accounts qualitatively and quantitatively for the universal temperature and field dependencies of memory dip.
@article{arxiv.1007.1043,
title = {Fluctuator model of memory dip in hopping insulators},
author = {Alexander L. Burin},
journal= {arXiv preprint arXiv:1007.1043},
year = {2010}
}