First-principles modeling of zincblende AlN layer in Al-AlN-TiN multilayers

Satyesh K Yadav; Jian Wang; Xiang-Yang Liu

doi:10.1063/1.4953593

First-principles modeling of zincblende AlN layer in Al-AlN-TiN multilayers

Materials Science 2016-06-21 v2

Authors: Satyesh K Yadav , Jian Wang , Xiang-Yang Liu

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Abstract

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.

Keywords

first-principles modeling zincblende AlN Al-AlN-TiN multilayers density functional theory nitrogen diffusion kinetic driven process thermodynamic stability

Cite

@article{arxiv.1604.02590,
  title  = {First-principles modeling of zincblende AlN layer in Al-AlN-TiN multilayers},
  author = {Satyesh K Yadav and Jian Wang and Xiang-Yang Liu},
  journal= {arXiv preprint arXiv:1604.02590},
  year   = {2016}
}

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