We present a first-principles-based many-body typical medium dynamical cluster approximation method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of a boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculations suggest that conduction could be obtained at a boron vacancy concentration as low as 1.0%. We also explore the distribution of the local density of states, a fingerprint of spatial variations, which allows localized and delocalized states to be distinguished. The presented method enables the study of disorder-driven insulator-metal transitions not only in h-BN but also in other physical materials.
@article{arxiv.1701.03842,
title = {First-principles-based method for electron localization: Application to monolayer hexagonal boron nitride},
author = {C. Ekuma and V. Dobrosavljević and D. Gunlycke},
journal= {arXiv preprint arXiv:1701.03842},
year = {2017}
}