Mesoscale and Nanoscale Physics · Physics
Accurate formation energies of charged defects in solids: a systematic approach
Dmitry Vinichenko, M. Gokhan Sensoy, Cynthia M. Friend, Efthimios Kaxiras
2017-07-05
Materials Science · Physics
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
Audrius Alkauskas, John L. Lyons, Daniel Steiauf, Chris G. Van de Walle
2013-03-14
Materials Science · Physics
Finite-size corrections for defect-involving vertical transitions in supercell calculations
Tomoya Gake, Yu Kumagai, Christoph Freysoldt, Fumiyasu Oba
2020-01-29
Mesoscale and Nanoscale Physics · Physics
Edge Configurational Effect on Band Gaps in Graphene Nanoribbons
Deepika, T. J. Dhilip Kumar, Alok Shukla, Rakesh Kumar
2016-10-11
Other Condensed Matter · Physics
Managing the supercell approximation for charged defects in semiconductors: finite size scaling, charge correction factors, the bandgap problem and the ab initio dielectric constant
C. W. M. Castleton, A. Hoglund, S. Mirbt
2009-11-11
Materials Science · Physics
Energetics of point defects in aluminum via orbital-free density functional theory
Ruizhi Qiu, Haiyan Lu, Bingyun Ao, Li Huang +2
2020-01-14
Materials Science · Physics
Long-range interactions between substitutional nitrogen dopants in graphene: electronic properties calculations
Philippe Lambin, Hakim Amara, François Ducastelle, Luc Henrard
2015-06-05
Materials Science · Physics
Self-consistent potential correction for charged periodic systems
Mauricio Chagas da Silva, Michael Lorke, Bálint Aradi, Meisam Farzalipour Tabriz +4
2021-02-24
Disordered Systems and Neural Networks · Physics
Finite size corrections to disordered systems on Erd\"{o}s-R\'enyi random graphs
Ulisse Ferrari, Carlo Lucibello, Flaviano Morone, Giorgio Parisi +2
2013-12-04
Materials Science · Physics
Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications
Yujia Tian, Devesh R. Kripalani, Ming Xue, Kun Zhou
2026-05-27
Materials Science · Physics
Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy
Koji Shimizu, Ying Dou, Elvis F. Arguelles, Takumi Moriya +2
2022-04-01
Materials Science · Physics
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
Jonas Lähnemann, Christian Hauswald, Martin Wölz, Uwe Jahn +3
2014-09-15
Strongly Correlated Electrons · Physics
Finite-size corrections to the energy spectra of gapless one-dimensional systems in the presence of boundaries
Yifan Liu, Haruki Shimizu, Atsushi Ueda, Masaki Oshikawa
2024-10-02