We report the first formation of the metallic p-n junctions, the ferroelectric (Ba,Sr)TiO3 (BST) switched optimally electron-doped (n-type) metallic T'-phase superconductor, (La,Ce)2CuO4 (LCCO), and hole-doped (p-type) metallic CMR manganite (La,Sr)MnO3 (LSMO) junctions. In contrast with the previous semiconductor p-n (p-I-n) junctions which are switched by the built-in field V0, the present metallic oxides p-I-n junctions are switched by double barrier fields, the built-in field V0, and the ferroelectric reversed polarized field Vrp, both take together to lead the junctions to possess definite parameters, such as definite negligible reversed current (10−9 A), large breakdown voltage (>7 V), and ultrahigh rectification (>2×104) in the bias voltage 1.2 V to 2.0 V and temperature range from 5 to over 300 K. The related transport feature, barrier size effect, and temperature effect are also observed and defined.
@article{arxiv.cond-mat/0611501,
title = {Ferroelectric switched all-metallic-oxide $p$-$n$ junctions},
author = {J. Yuan and H. Wu and L. Zhao and K. Jin and L. X. Cao and B. Y. Zhu and S. J. Zhu and J. P. Zhong and J. Miao and H. Yang and B. Xu and X. Y. Qi and Y. Han and X. G. Qiu and X. F. Duan and B. R. Zhao},
journal= {arXiv preprint arXiv:cond-mat/0611501},
year = {2007}
}