Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Ashok Kumar; D. Barrionuevo; N Ortega; A. K. Shukla; Santiranjan Shannigrahi; J. F. Scott; Ram S. Katiyar

doi:10.1063/1.4916732

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Materials Science 2015-06-24 v1

Authors: Ashok Kumar , D. Barrionuevo , N Ortega , A. K. Shukla , Santiranjan Shannigrahi , J. F. Scott , Ram S. Katiyar

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Abstract

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping.

Keywords

thin film magnetism thin films ferroelectric thin films

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@article{arxiv.1503.08067,
  title  = {Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions},
  author = {Ashok Kumar and D. Barrionuevo and N Ortega and A. K. Shukla and Santiranjan Shannigrahi and J. F. Scott and Ram S. Katiyar},
  journal= {arXiv preprint arXiv:1503.08067},
  year   = {2015}
}

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17 pages, 5 figures

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

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