We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.
@article{arxiv.2407.09740,
title = {Ferroelectric AlBN Films by Molecular Beam Epitaxy},
author = {Chandrashekhar Savant and Ved Gund and Kazuki Nomoto and Takuya Maeda and Shubham Jadhav and Joongwon Lee and Madhav Ramesh and Eungkyun Kim and Thai-Son Nguyen and Yu-Hsin Chen and Joseph Casamento and Farhan Rana and Amit Lal and Huili and Xing and Debdeep Jena},
journal= {arXiv preprint arXiv:2407.09740},
year = {2024}
}