Fermi-level mediated acceleration of flash sintering of oxide ceramics

The atomistic understanding of flash sintering (FS) remains speculative, despite its efficiency and versatility in materials processing. Employing first-principles calculations we demonstrate how charge compensation of a range of defects in the prototypical Y-stabilized cubic ZrO$_2$ (YSZ) shifts Fermi level E$_F$ up during FS, thereby accelerating cation migration for fast mass transport. The charge transition of Zr vacancy, V$_{Zr}^q$, reduces its bulk diffusion barrier in V$_{Zr}^{-4}$ during flash by 2 eV, relative to V$_{Zr}^0$ before flash, which is triggered by the charge equilibrium of nonstoichiometric defects. The substituent defect Y$_{Zr}$, released by annihilating O vacancy, V$_O$, in Y$_{Zr}$V$_O$Y$_{Zr}$ defect complex, acts as electron acceptor and favors V$_{Zr}^0$ before flash whereas excess V$_O$, as electron donor thermally generated at the FS onset, upshift E$_F$ and thus support V$_{Zr}^{-4}$. The proposed mechanism of Fermi-level mediated cation diffusion for YSZ is generalized to other flash-sintered ceramics and has considerable bearing on the general theory of FS techniques in oxide ceramics.