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Feature-rich electronic properties of aluminum-doped graphenes

Materials Science 2016-06-07 v1 Mesoscale and Nanoscale Physics

Abstract

The electronic properties of aluminum-doped graphenes enriched by multi-orbital hybridizations are investigated using first-principles calculations. The feature-rich electronic structures exhibit the quasi-rigid red shifts of the carbon-created energy bands, the Al-dominated valence and conduction bands, and many free electrons in the conduction Dirac cone. These are directly reflected in the special structures of density of states (DOS). The Al- and alkali-induced high free carrier densities are almost the same. There exist certain important differences among the Al-, alkali- and halogen-doped grapehenes, such as, the buckled or planar graphene, the preserved or seriously distorted Dirac cone, the existence of the adatom-dominated valence bands, the free electrons or holes, the degenerate or splitting spin-related states, and the simple or complicated peaks in DOS. The similarities and differences mainly come from the diverse orbital hybridizations in adatom-C bonds, as indicated from the atom-dominated bands, the spatial charge distributions and the orbital-projected DOS.

Keywords

Cite

@article{arxiv.1606.01624,
  title  = {Feature-rich electronic properties of aluminum-doped graphenes},
  author = {Shih-Yang Lin and Yu-Tsung Lin and Ngoc Thanh Thuy Tran and Wu-Pei Su and Ming-Fa Lin},
  journal= {arXiv preprint arXiv:1606.01624},
  year   = {2016}
}