The recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nano-electronic circuits and devices, including chemical and biological sensors, nano-scale mosaics for molecular electronics, and ultra-dense field-effect transistor (FET) arrays.
@article{arxiv.cond-mat/0403518,
title = {Fabrication of Conducting Si Nanowire Arrays},
author = {E. Johnston-Halperin and R. A. Beckman and N. A. Melosh and Y. Luo and J. E. Green and J. R. Heath},
journal= {arXiv preprint arXiv:cond-mat/0403518},
year = {2007}
}