Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Wenhong Wang; Yin Du; Enke Liu; Zhongyuan Liu; Guangheng Wu

doi:10.1063/1.4766902

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Materials Science 2012-11-26 v1

Authors: Wenhong Wang , Yin Du , Enke Liu , Zhongyuan Liu , Guangheng Wu

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Abstract

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.

Keywords

half-Heusler YPtSb thin films magnetron co-sputtering Hall mobility magnetoresistance topological surface states

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@article{arxiv.1210.5808,
  title  = {Fabrication and characterization of the gapless half-Heusler YPtSb thin films},
  author = {Wenhong Wang and Yin Du and Enke Liu and Zhongyuan Liu and Guangheng Wu},
  journal= {arXiv preprint arXiv:1210.5808},
  year   = {2012}
}

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16 pages, 3 figures, 1 table, submitted for publication

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

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