English

Exploring semiconductor substrates for Silicene epitaxy

Materials Science 2013-10-07 v1

Abstract

We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal termi- nated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on non metal terminated surfaces of the semiconductor substrates.

Keywords

Cite

@article{arxiv.1308.5004,
  title  = {Exploring semiconductor substrates for Silicene epitaxy},
  author = {Amrita Bhattacharya and Saswata Bhattacharya and G. P. Das},
  journal= {arXiv preprint arXiv:1308.5004},
  year   = {2013}
}

Comments

5 journal pages, 3 figures

R2 v1 2026-06-22T01:13:43.937Z