III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS2, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS2 in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS2 coating. Furthermore, a strong interplay is observed between MoS2 monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as F\"orster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures.
@article{arxiv.2308.10687,
title = {Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer},
author = {Danxuan Chen and Jin Jiang and Thomas F. K. Weatherley and Jean-François Carlin and Mitali Banerjee and Nicolas Grandjean},
journal= {arXiv preprint arXiv:2308.10687},
year = {2024}
}