English

Exact Bond Ordered Ground State for the Transition Between the Band and the Mott Insulator

Strongly Correlated Electrons 2009-11-10 v2

Abstract

We derive an effective Hamiltonian HeffH_{eff} for an ionic Hubbard chain, valid for tU,Δt\ll U,\Delta , where tt is the hopping, UU the Coulomb repulsion, and Δ\Delta the charge transfer energy. HeffH_{eff} is the minimal model for describing the transition from the band insulator (BI) (ΔUt\Delta -U\gg t) and the Mott insulator (MI) (UΔtU-\Delta \gg t). Using spin-particle transformations (Phys. Rev. Lett. \textbf{86}, 1082 (2001)), we map Heff(U=Δ)H_{eff}(U=\Delta) into an SU(3) antiferromagnetic Heisenberg model whose exact ground state is known. In this way, we show rigorously that a spontaneously dimerized insulating ferroelectric phase appears in the transition region between the BI and MI.

Keywords

Cite

@article{arxiv.cond-mat/0309295,
  title  = {Exact Bond Ordered Ground State for the Transition Between the Band and the Mott Insulator},
  author = {C. D. Batista and A. A. Aligia},
  journal= {arXiv preprint arXiv:cond-mat/0309295},
  year   = {2009}
}