The electronic origin of the structural transition in 1T-VSe2 is re-evaluated through an extensive angle-resolved photoemission spectroscopy experiment. The components of the band structure, missing in previous reports, are revealed. Earlier observations, shown to be temperature independent and therefore not correlated with the phase transition, are explained in terms of the increased complexity of the band structure close to the Fermi level. Only the overall size of the Fermi surface is found to be positively correlated with the phase transition at 110 K. These observations, quite distant from the charge density wave scenario commonly considered for 1T-VSe2, bring fresh perspectives toward the correct description of structural transitions in dichalcogenides materials.
@article{arxiv.2408.05930,
title = {Evolution of the Fermi surface of 1T-VSe$_2$ across a structural phase transition},
author = {Turgut Yilmaz and Xiao Tong and Jerzy T. Sadowski and Sooyeon Hwang and Kenneth Evans-Lutterodt and Kim Kisslinger and Elio Vescovo},
journal= {arXiv preprint arXiv:2408.05930},
year = {2024}
}