We measured the in-plane resistivity anisotropy in the underdoped Ca1−xNaxFe2As2 single crystals. The anisotropy (indicated by ρb−ρa) appears below a temperature well above magnetic transition temperature TN, being positive (ρb−ρa>0) as x≤ 0.14. With increasing the doping level to x = 0.19, an intersection between ρb and ρa is observed upon cooling, with ρb−ρa<0 at low-temperature deep inside a magnetically ordered state, while ρb−ρa>0 at high temperature. Subsequently, further increase of hole concentration leads to a negative anisotropy ρb−ρa<0 in the whole temperature range. These results manifest that the anisotropic behavior of resistivity in the magnetically ordered state depends strongly on the competition of the contributions from different mechanisms, and the competition between the two contributions results in a complicated evolution of the anisotropy of in-plane resistivity with doping level.
@article{arxiv.1405.6199,
title = {Evolution of Anisotropic In-plane Resistivity with doping level in Ca$_{1-x}$Na$_x$Fe$_2$As$_2$ Single Crystals},
author = {J. Q. Ma and X. G. Luo and P. Cheng and N. Zhu and D. Y. Liu and F. Chen and J. J. Ying and A. F. Wang and X. F. Lu and B. Lei and X. H. Chen},
journal= {arXiv preprint arXiv:1405.6199},
year = {2014}
}