We report electron tunneling spectroscopy studies on single crystalline FeSi sample performed for the case of homogeneous tunnel junction contacts and for the case of counter electrodes made from Pt-Rh alloy. Our results reveal that while the tunneling spectroscopy in the configuration with Pt-Rh tip is preferably sensitive to the d-partial density of states and to the indirect energy gap, the FeSi-FeSi type of tunnel junction yields spectroscopic information on the c-partial density of states and on the direct gap in FeSi.
@article{arxiv.2010.10838,
title = {Evidence for direct and indirect gap in FeSi from electron tunneling spectroscopy},
author = {M. Baťková and I. Baťko and M. Mihalik},
journal= {arXiv preprint arXiv:2010.10838},
year = {2020}
}