Etching of Graphene Devices with a Helium Ion Beam

M. C. Lemme; D. C. Bell; J. R. Williams; L. A. Stern; B. W. H. Baugher; P. Jarillo-Herrero; C. M. Marcus

doi:10.1021/nn900744z

Etching of Graphene Devices with a Helium Ion Beam

Mesoscale and Nanoscale Physics 2009-10-08 v2 Materials Science

Authors: M. C. Lemme , D. C. Bell , J. R. Williams , L. A. Stern , B. W. H. Baugher , P. Jarillo-Herrero , C. M. Marcus

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Abstract

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO2) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Keywords

graphene helium ion beam etching nanostructuring electrical isolation in situ measurement residual conductivity

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@article{arxiv.0905.4409,
  title  = {Etching of Graphene Devices with a Helium Ion Beam},
  author = {M. C. Lemme and D. C. Bell and J. R. Williams and L. A. Stern and B. W. H. Baugher and P. Jarillo-Herrero and C. M. Marcus},
  journal= {arXiv preprint arXiv:0905.4409},
  year   = {2009}
}

Etching of Graphene Devices with a Helium Ion Beam

Abstract

Keywords

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