Epitaxial single T centres in silicon-on-insulator
Abstract
Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural silicon for crystal growth. These results establish epitaxial T centres as a robust foundation for coherent spin-photon interfaces in silicon quantum photonics.
Keywords
Cite
@article{arxiv.2607.06272,
title = {Epitaxial single T centres in silicon-on-insulator},
author = {Christian H. Christiansen and Kasper H. Nielsen and Alisha Nanwani and Sebastiano Guaraldo and E. Laurits Piehorsch and Arnulf J. Snedker-Nielsen and Magnus L. Madsen and David R. Gongora and Emanuele Brusaschi and Rodrigo A. Thomas and Ian Farrer and D. Hieu Nguyen and Georgios Kountouris and Beñat M. d. A. Jokisch and Mohammad Khalifa and Claudia Piccinini and Mathias Ø. Augustesen and Hugo Laurell and Kokeb B. Benti and Maria S. Gonzalez and Amedeo Carbone and Elvedin Memisevic and Sangeeth Kallatt and Mark K. Svendsen and Marianne E. Bathen and Lasse Vines and Peter Granum and Peter Krogstrup and Stefano Paesani},
journal= {arXiv preprint arXiv:2607.06272},
year = {2026}
}
Comments
9 pages