Enhanced superconductivity in F-doped LaO1-xFxBiSSe

Xiao-Chuan Wang; Dong-Yun Chen; Qi Guo; Jia Yu; Bin-Bin Ruan; Qing-Ge Mu; Gen-Fu Chen; Zhi-An Ren

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

Superconductivity 2014-05-01 v1

Authors: Xiao-Chuan Wang , Dong-Yun Chen , Qi Guo , Jia Yu , Bin-Bin Ruan , Qing-Ge Mu , Gen-Fu Chen , Zhi-An Ren

Abstract

The layered compound LaOBiSSe was successfully synthesized by a two-step solid-state reaction method, which is isostructural with the quaternary compound LaOBiS2 indicated by the powder X-ray diffraction characterization, and the crystal lattice parameters are slightly expanded by the substitution of Se atoms. Electrical transport measurement shows that LaOBiSSe exhibits semiconducting behavior similar with the parent compound LaOBiS2, while by F-doping the samples can be much more easily turned to be metallic and superconducting at low temperature with a small amount of F. Under the optimal carrier doping concentration of F ~ 0.5, the superconducting critical temperature of LaO0.5F0.5BiSSe is clearly enhanced up to a value of 3.8 K than the 3.2 K of LaO0.5F0.5BiS2.

Keywords

superconductivity F-doping LaOBiSSe solid-state reaction electrical transport critical temperature

Cite

@article{arxiv.1404.7562,
  title  = {Enhanced superconductivity in F-doped LaO1-xFxBiSSe},
  author = {Xiao-Chuan Wang and Dong-Yun Chen and Qi Guo and Jia Yu and Bin-Bin Ruan and Qing-Ge Mu and Gen-Fu Chen and Zhi-An Ren},
  journal= {arXiv preprint arXiv:1404.7562},
  year   = {2014}
}

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

Abstract

Keywords

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