We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier doping. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, making the freestanding borophene superconduct with Tc close to 19.0 K. The tensile strain can increase Tc to 27.4 K, while the hole doping can notably increase Tc to 34.8 K. The results indicate that the borophene grown on substrates with large lattice parameters or under photoexcitation can show enhanced superconductivity with Tc far more above liquid hydrogen temperature of 20.3 K, which will largely broaden the applications of such novel material.
@article{arxiv.1604.06519,
title = {Enhanced superconductivity by strain and carrier-doping in borophene: A first principles prediction},
author = {R. C. Xiao and D. F. Shao and W. J. Lu and H. Y. Lv and J. Y. Li and Y. P. Sun},
journal= {arXiv preprint arXiv:1604.06519},
year = {2017}
}