English

Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer

Applied Physics 2019-12-13 v2

Abstract

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformational force to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to the inversion asymmetry. The intrinsic piezoelectric coefficient (e11) of MoS2 is ~298 pC/m. For the single atomic shift of Mo of 20% along the armchair direction, the piezoelectric coefficient (e11) of MoS2 with 5x5 unit cells was enhanced up to 18%, and significantly modified the band structure. The single atomic shift in the MoS2 monolayer also induced new energy levels inside the forbidden bandgap. The defect-induced energy levels for a Mo atom shift along the armchair direction are relatively deeper than the energy levels for a S atom shift along the same direction. It indicates that the piezoelectricity and band structure of MoS2 can be engineered by a single atomic shift in the monolayer with multi unit cells for mechano-electrical applications.

Keywords

Cite

@article{arxiv.1708.04353,
  title  = {Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer},
  author = {Sheng Yu and Quinton Rice and Tikaram Neupane and Bagher Tabibi and Felix Jaetae Seo},
  journal= {arXiv preprint arXiv:1708.04353},
  year   = {2019}
}

Comments

The results are less rigorous and even misleading