Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser
Optics
2015-06-03 v1
Abstract
A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mode clusters is typically by an order of magnitude larger that the individual mode spacing.
Keywords
Cite
@article{arxiv.1201.2804,
title = {Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser},
author = {Igor V. Smetanin and Peter P. Vasil'ev},
journal= {arXiv preprint arXiv:1201.2804},
year = {2015}
}
Comments
3 pages, 2 figures