Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, diamond high-overtone bulk acoustic resonators (HBARs), feature an integrated piezoelectric transducer and support high-quality factor resonance modes into the GHz frequency range. The acoustic modes allow mechanical manipulation of deeply embedded NV centers with long spin and orbital coherence times. Unfortunately, the spin-phonon coupling rate is limited by the large resonator size, >100μm, and thus strongly-coupled NV electron-phonon interactions remain out of reach in current diamond BAR devices. Here, we report the design and fabrication of a semi-confocal HBAR (SCHBAR) device on diamond (silicon carbide) with f⋅Q>1012(>1013). The semi-confocal geometry confines the phonon mode laterally below 10~μm. This drastic reduction in modal volume enhances defect center electron-phonon coupling. For the native NV centers inside the diamond device, we demonstrate mechanically driven spin transitions and show a high strain-driving efficiency with a Rabi frequency of (2π)2.19(14)~MHz/Vp, which is comparable to a typical microwave antenna at the same microwave power.
@article{arxiv.1906.06309,
title = {Engineering electron-phonon coupling of quantum defects to a semi-confocal acoustic resonator},
author = {Huiyao Chen and Noah F. Opondo and Boyang Jiang and Evan R. MacQuarrie and Raphaël S. Daveau and Sunil A. Bhave and Gregory D. Fuchs},
journal= {arXiv preprint arXiv:1906.06309},
year = {2019}
}
Comments
29 pages, 12 figures including supporting information