Excitons in optoelectronic devices have been generated through optical excitation, external carrier injection, or employing pre-existing charges. Here, we reveal a new way to electrically generate excitons in transition metal dichalcogenides (TMDs). The TMD is placed on top of a gold-hBN-graphene tunnel junction, outside of the tunneling pathway. This electrically driven device features a photoemission spectrum with a distinct peak at the exciton energy of the TMD. We interpret this observation as exciton generation by energy transfer from tunneling electrons, which is further supported by a theoretical model based on inelastic electron tunneling. Our findings introduce a new paradigm for exciton creation in van der Waals heterostructures and provide inspiration for a new class of optoelectronic devices in which the optically active material is separated from the electrical pathway.
@article{arxiv.2209.11641,
title = {Energy transfer from tunneling electrons to excitons},
author = {Sotirios Papadopoulos and Lujun Wang and Takashi Taniguchi and Kenji Watanabe and Lukas Novotny},
journal= {arXiv preprint arXiv:2209.11641},
year = {2022}
}