Energy Scavenging in Silicon Raman Amplifiers
Optics
2007-05-23 v2
Abstract
Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain, and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices.
Keywords
Cite
@article{arxiv.physics/0605143,
title = {Energy Scavenging in Silicon Raman Amplifiers},
author = {S. Fathpour and K. K. Tsia and B. Jalali},
journal= {arXiv preprint arXiv:physics/0605143},
year = {2007}
}
Comments
13 pages