English

Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$

Materials Science 2022-11-01 v1 Mesoscale and Nanoscale Physics

Abstract

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe2_2 possesses two stacking arrangements, the Weyl semimetal Td_d phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe2_2 follow the Td_d, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe2_2 is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe2_2, which is isostructural and isoelectronic to MoTe2_2, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe2_2 devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials.

Keywords

Cite

@article{arxiv.2210.16390,
  title  = {Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$},
  author = {James L Hart and Lopa Bhatt and Yanbing Zhu and Myung-Geun Han and Elisabeth Bianco and Shunran Li and David J Hynek and John A Schneeloch and Yu Tao and Despina Louca and Peijun Guo and Yimei Zhu and Felipe Jornada and Evan J Reed and Lena F Kourkoutis and Judy J Cha},
  journal= {arXiv preprint arXiv:2210.16390},
  year   = {2022}
}

Comments

6 figures, 2 tables