Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

Annett Thøgersen; Margrethe Rein; Edouard Monakhov; Jeyanthinath Mayandi; Spyros Diplas

doi:10.1063/1.3587174

Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

Materials Science 2012-10-02 v1 Mesoscale and Nanoscale Physics

Authors: Annett Thøgersen , Margrethe Rein , Edouard Monakhov , Jeyanthinath Mayandi , Spyros Diplas

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Abstract

The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO $_x$ was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO $_x$ interface layer thickness.

Keywords

ITO films magnetron sputtering oxygen deficiency TEM XPS nanoclusters

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@article{arxiv.1210.0035,
  title  = {Elemental distribution and oxygen deficiency of magnetron sputtered ITO films},
  author = {Annett Thøgersen and Margrethe Rein and Edouard Monakhov and Jeyanthinath Mayandi and Spyros Diplas},
  journal= {arXiv preprint arXiv:1210.0035},
  year   = {2012}
}

Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

Abstract

Keywords

Cite

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