Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Abstract
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized accross a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.
Keywords
Cite
@article{arxiv.2607.19051,
title = {Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators},
author = {Manuel Meyer and Tobias Fähndrich and Sebastian Schmid and Justus Walter and Martin Kamp and Adriana Wolf and Sergey Krishtopenko and Guillaume Sigu and Jean-Baptiste Rodriguez and Eric Tournie and Gerald Bastard and Frederic Teppe and Fabian Hartmann and Sven Höfling and Benoit Jouault},
journal= {arXiv preprint arXiv:2607.19051},
year = {2026}
}