Electronic structure, phase stability and chemical bonding in Th$_2$Al and Th$_2$AlH$_4$
Abstract
We present the results of theoretical investigation on the electronic structure, bonding nature and ground state properties of ThAl and ThAlH using generalized-gradient-corrected first-principles full-potential density-functional calculations. ThAlH has been reported to violate the "2 \AA rule" of H-H separation in hydrides. From our total energy as well as force-minimization calculations, we found a shortest H-H separation of 1.95 {\AA} in accordance with recent high resolution powder neutron diffraction experiments. When the ThAl matrix is hydrogenated, the volume expansion is highly anisotropic, which is quite opposite to other hydrides having the same crystal structure. The bonding nature of these materials are analyzed from the density of states, crystal-orbital Hamiltonian population and valence-charge-density analyses. Our calculation predicts different nature of bonding for the H atoms along and . The strongest bonding in ThAlH is between Th and H along which form dumb-bell shaped H-Th-H subunits. Due to this strong covalent interaction there is very small amount of electrons present between H atoms along which makes repulsive interaction between the H atoms smaller and this is the precise reason why the 2 {\AA} rule is violated. The large difference in the interatomic distances between the interstitial region where one can accommodate H in the and planes along with the strong covalent interaction between Th and H are the main reasons for highly anisotropic volume expansion on hydrogenation of ThAl.
Keywords
Cite
@article{arxiv.cond-mat/0108278,
title = {Electronic structure, phase stability and chemical bonding in Th$_2$Al and Th$_2$AlH$_4$},
author = {P. Vajeeston and R. Vidya and P. Ravindran and H. Fjellvåg and A. Kjekshus and A. Skjeltorp},
journal= {arXiv preprint arXiv:cond-mat/0108278},
year = {2009}
}
Comments
14 pages, 9 figures