English

Electronic structure of fluorides: general trends for ground and excited state properties

Materials Science 2011-08-01 v1

Abstract

The electronic structure of fluorite crystals are studied by means of density functional theory within the local density approximation for the exchange correlation energy. The ground-state electronic properties, which have been calculated for the cubic structures CaF2CaF_{2},SrF2SrF_{2}, BaF2BaF_{2}, CdF2CdF_{2}, HgF2HgF_{2}, β\beta -PbF2PbF_{2}, using a plane waves expansion of the wave functions, show good comparison with existing experimental data and previous theoretical results. The electronic density of states at the gap region for all the compounds and their energy-band structure have been calculated and compared with the existing data in the literature. General trends for the ground-state parameters, the electronic energy-bands and transition energies for all the fluorides considered are given and discussed in details. Moreover, for the first time results for HgF2HgF_{2} have been presented.

Keywords

Cite

@article{arxiv.1107.5962,
  title  = {Electronic structure of fluorides: general trends for ground and excited state properties},
  author = {Emiliano Cadelano and Giancarlo Cappellini},
  journal= {arXiv preprint arXiv:1107.5962},
  year   = {2011}
}