Electronic Structure of Fibonacci Si Delta-Doped Gaas
Abstract
We study the electronic structure of a new type of Fibonacci superlattice based on Si -doped GaAs. Assuming that -doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to -doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.
Keywords
Cite
@article{arxiv.cond-mat/9409073,
title = {Electronic Structure of Fibonacci Si Delta-Doped Gaas},
author = {F. Dominguez-Adame and E. Macia and B. Mendez},
journal= {arXiv preprint arXiv:cond-mat/9409073},
year = {2015}
}
Comments
to appear in Phys. Lett. A. 9 pages in REXTeX style. 6 figures by fax on request to E. Macia ([email protected]). FM-32-94