English

Electronic structure of a layered altermagnetic compound CoNb4Se8

Mesoscale and Nanoscale Physics 2025-03-24 v1 Materials Science

Abstract

Recently, there has been a growing interest in altermagnetism, a novel form of magnetism, characterized by unique spin-splitting even in the absence of both net magnetic moments and spin-orbit coupling. Despite numerous theoretical predictions, experimental evidence of such spin-splitting in real materials remains limited. In this study, we use angle-resolved photoemission spectroscopy (ARPES) combined with density functional theory (DFT) calculations to investigate the electronic band structure of the altermagnet candidate CoNb4Se8. This material features an ordered sublattice of intercalated Co atoms within NbSe2 layers. Magnetization and electrical resistivity measurements reveal the onset of antiferromagnetism below 168 K. Temperature dependent ARPES data, supported by DFT calculations, uncover spin split bands along the MGM high-symmetry direction. The observation of spin splitting in this high temperature altermagnet opens new avenues for exploring its electronic properties and potential applications in spintronic technologies.

Keywords

Cite

@article{arxiv.2503.16670,
  title  = {Electronic structure of a layered altermagnetic compound CoNb4Se8},
  author = {Anup Pradhan Sakhya and Mazharul Islam Mondal and Milo Sprague and Resham Babu Regmi and Arun K Kumay and Himanshu Sheokand and Igor. I. Mazin and Nirmal J. Ghimire and Madhab Neupane},
  journal= {arXiv preprint arXiv:2503.16670},
  year   = {2025}
}

Comments

7 pages, 4 figures

R2 v1 2026-06-28T22:29:00.495Z