English

Electronic Structure in Gapped Graphene with Coulomb Potential

Mesoscale and Nanoscale Physics 2015-05-13 v1

Abstract

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

Keywords

Cite

@article{arxiv.0804.0984,
  title  = {Electronic Structure in Gapped Graphene with Coulomb Potential},
  author = {W. Zhu and M. L. Liang and Q. W. Shi and Z. F. Wang and J. Chen and J. G. Hou},
  journal= {arXiv preprint arXiv:0804.0984},
  year   = {2015}
}

Comments

5 page, 4 figures

R2 v1 2026-06-21T10:28:16.516Z