English

Electronic properties of antidot lattices fabricated by atomic force lithography

Mesoscale and Nanoscale Physics 2009-11-07 v1

Abstract

Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples.

Keywords

Cite

@article{arxiv.cond-mat/0108520,
  title  = {Electronic properties of antidot lattices fabricated by atomic force lithography},
  author = {A. Dorn and A. Fuhrer and T. Ihn and T. Heinzel and K. Ensslin and W. Wegscheider and M. Bichler},
  journal= {arXiv preprint arXiv:cond-mat/0108520},
  year   = {2009}
}

Comments

Appl. Phys. Lett., in print