Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

C. Tournier-Colletta; L. Moreschini; G. Autès; S. Moser; A. Crepaldi; H. Berger; A. L. Walter; K. S. Kim; A. Bostwick; P. Monceau; E. Rotenberg; O. V. Yazyev; M. Grioni

doi:10.1103/PhysRevLett.110.236401

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

Strongly Correlated Electrons 2013-06-21 v1

Authors: C. Tournier-Colletta , L. Moreschini , G. Autès , S. Moser , A. Crepaldi , H. Berger , A. L. Walter , K. S. Kim , A. Bostwick , P. Monceau , E. Rotenberg , O. V. Yazyev , M. Grioni

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Abstract

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.

Keywords

charge density wave electronic structure of materials superconductivity

Cite

@article{arxiv.1303.5551,
  title  = {Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I},
  author = {C. Tournier-Colletta and L. Moreschini and G. Autès and S. Moser and A. Crepaldi and H. Berger and A. L. Walter and K. S. Kim and A. Bostwick and P. Monceau and E. Rotenberg and O. V. Yazyev and M. Grioni},
  journal= {arXiv preprint arXiv:1303.5551},
  year   = {2013}
}

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5 pages, 3 figures

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

Abstract

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