English

Electronic correlations in the semiconducting half-Heusler compound FeVSb

Materials Science 2021-01-29 v2

Abstract

Electronic correlations are crucial to the low energy physics of metallic systems with localized dd and ff states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit (s2p6d10s^2 p^6 d^{10}). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of m/mbare=1.4m^{*}/m_{bare}= 1.4, where mm^{*} is the measured effective mass and mbarem_{bare} is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hund's coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hund's coupling in intermetallic band insulators.

Keywords

Cite

@article{arxiv.2009.11489,
  title  = {Electronic correlations in the semiconducting half-Heusler compound FeVSb},
  author = {Estiaque H. Shourov and Patrick J. Strohbeen and Dongxue Du and Abhishek Sharan and Felipe C. de Lima and Fanny Rodolakis and Jessica McChesney and Vincent Yannello and Anderson Janotti and Turan Birol and Jason K. Kawasaki},
  journal= {arXiv preprint arXiv:2009.11489},
  year   = {2021}
}