Electron scattering in tantalum monoarsenide

Cheng-Long Zhang; Zhujun Yuan; Qing-Dong Jiang; Bingbing Tong; Chi Zhang; X. C. Xie; Shuang Jia

doi:10.1103/PhysRevB.95.085202

Electron scattering in tantalum monoarsenide

Materials Science 2017-02-07 v1

Authors: Cheng-Long Zhang , Zhujun Yuan , Qing-Dong Jiang , Bingbing Tong , Chi Zhang , X. C. Xie , Shuang Jia

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Abstract

We report comprehensive studies of the single crystal growth and electrical transport properties for various samples of TaAs, the first experimentally confirmed inversion symmetry-breaking Weyl semimetal. The transport parameters for different samples are obtained through the fitting of the two band model and the analysis of Shubnikov de Haas oscillations. We find that the ratio factor of transport lifetime to quantum lifetime is intensively enhanced when the Fermi level approaches the Weyl node. This result is consistent with the side-jump interpretation derived from a chirality-protected shift in the scattering process for a Weyl semimetal.

Keywords

weyl semimetals charge carrier mobility

Cite

@article{arxiv.1702.01245,
  title  = {Electron scattering in tantalum monoarsenide},
  author = {Cheng-Long Zhang and Zhujun Yuan and Qing-Dong Jiang and Bingbing Tong and Chi Zhang and X. C. Xie and Shuang Jia},
  journal= {arXiv preprint arXiv:1702.01245},
  year   = {2017}
}

Comments

This is a modified version of arXiv:1502.00251

Electron scattering in tantalum monoarsenide

Abstract

Keywords

Cite

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