This study shows that the dielectric function of crystalline Si quantum wells (c-Si QW) is influenced by both carrier confinement and electron-phonon interactions. The energy shifts and lifetime broadening of the excitonic E1 direct gap transition of c-Si QWs from 2 to 10 nm are found to have a significant dimensional and temperature dependence that can be traced to changes in the phonon dispersion of nanoscale films. The influence of electron-phonon interactions on the dielectric function was verified by altering the phonon dispersion using different dielectric layers above a 5 nm c-Si QW.
@article{arxiv.1103.4102,
title = {Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films},
author = {Vimal K Kamineni and Alain C Diebold},
journal= {arXiv preprint arXiv:1103.4102},
year = {2015}
}